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Silicon Phototransistor
OP580
Absolute Maximum Ratings (T A =25°C unless otherwise noted)
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power Dissipation
Electrical Characteristics (T A = 25 ° C unless otherwise noted)
-40 o C to +85 o C
-25 o C to +85 o C
260° C (1)
30 V
5V
20 mA
75 mW (2)
SYMBOL
I C(ON)
V CE(SAT)
I CE0
V (BR)CEO
V (BR)ECO
t r , t f
PARAMETER
On-State Collector Current
Collector-Emitter Saturation Voltage
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Rise Time , Fall Time
MIN
1.0
-
-
30
5
-
TYP
-
-
-
-
-
15
MAX
-
0.4
100
-
-
-
UNITS
mA
V
nA
V
V
μs
TEST CONDITIONS
V CE = 5.0 V, E E = 5.0 mW/cm 2(3)
I C = 100 μA, E E = 2.0 mW/cm 2(3)
V CE = 5.0 V, E E = 0 (4)
I C = 100 μA
I E = 100 μA
I C = 1 mA, R L = 1 K ?
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. Derate linearly at 2.17 mW/° C above 25° C.
3. E E(APT) is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than
10% over the entire lens surface of the phototransistor being tested.
4. To calculate typical collector dark current in μA, use the formula I CEO = 10 (0.04 Ta-3.4) where T a is the ambient temperature in ° C.
100
80
60
40
20
0
Relative Response vs Wavelength
100
80
60
40
20
0
Relative Response vs Angular Position
400
500
600
700
800
900
1000
1100
-90
-60
-30
0
30
60
90
Wavelength (nm)
Angular Position (Degrees)
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue 1.3 05/10
Page 2 of 3
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
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